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February 27, 2017 /  Category: Active components, Beck Handel

600V Super Junction 2nd Generation N-Channel MOSFETs

 

Taiwan Semiconductor has released a second generation of
600 V super junction power MOSFETs.

  • Faster, higher efficiency switching performance
  • Improved figure of merit
  • Faster recovery

The TSM60NBxxx family of 600 V N-channel power MOSFETs offer RDS(on)(max) ranging from 190 mΩ to 1.4 Ω.

The advanced and proprietary super-junction technology is specifically designed to resolve the efficiency limitations of high voltage planar MOSFETs by improving the RDS(on) * Qg figure of merit in load switching applications.

Low RDS(on), low gate charge (Qg), and fast reverse recovery performance reduces conduction and switching losses.

A variety of thermally efficient, reliable, RoHS/REACH compliant, and Halogen free packages are available for space-constrained power switching applications.

Features:

  • G2 Super-Junction technology
  • 100% UIS tested
  • Low Gate Charge, Improved FOM
  • Fast Reverse Recovery
  • RoHS / REACH compliant and Halogen Free Packaging

Applications:

  • LED Lighting
  • Charger / Adaptor
  • SMPS Power Factor Correction
  • LLC Primary Side MOSFET
TSC P/NPackageVDS
(V)
RDS(ON) max.
(Ω)
R DS(ON) typ.
(Ω)
Qg typ.
(nC)
Vgs
(±V)
trr typ.
(ns)
Qrr typ.
(μC)
TSM60NB190CI/CZ /CM2ITO-220/TO-220 /TO-263600 0.190.1731303604.5
TSM60NB260CIITO-2206000.260.1930303474.2
TSM60NB380CH/CPTO-251/TO-2526000.380.2619302722.9
TSM60NB600CH/CPTO-251/TO-2526000.600.4513302332.2
TSM60NB900CH/CPTO-251/TO-2526000.900.6910301861.4
TSM60NB1R4CH/CPTO-251/TO-2526001.401.007301260.6

Datasheets TSM60NBxxx